Applied Solid State Science

Applied Solid State Science

Advances in Materials and Device Research

1st Edition - October 28, 1972

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  • Editor: Raymond Wolfe
  • eBook ISBN: 9781483214726

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Description

Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses the diffraction of light by sound waves and the uses of this interaction. The electrooptical and nonlinear optical properties of crystals are also considered, with emphasis on ferroelectric crystals of the oxygen octahedra class. Solid state physicists, materials scientists, electrical engineers, and graduate students studying the subjects being discussed will find the book invaluable.

Table of Contents


  • List of Contributors

    Preface

    Contents of Previous Volumes

    Articles Planned for Future Volumes

    Physics of Multilayer-Gate IGFET Memories

    I. Introduction

    II. IGFET Characteristics

    III. Oxide Instabilities

    IV. Current Transport through Insulators

    V. The Memory Element

    References

    Acousto-optics

    I. Introduction

    II. General Formulation

    III. Strong Interaction

    IV. Weak Interaction

    V. Materials

    VI. Applications

    VII. Special Topics

    Appendix A

    Appendix Β

    References

    Drift Velocity and Trapping in Semiconductors—Transient Charge Technique

    I. Introduction

    II. Experimental Method

    III. Drift Velocity

    IV. Trapping Processes

    V. Overview

    Appendix A. Circuit Considerations

    Appendix B. Transient Response

    Appendix C. Pulse Rise Time

    Appendix D. Measurement of the Energy to Create a Pair in Silicon, Germanium, and CdTe

    References

    Electrooptical and Nonlinear Optical Properties of Crystals

    I. Introduction

    II. Phenomenological Description of Electrooptic Phenomena

    III. Frequency Dependence of the Electrooptic Effect

    IV. Electronic Electrooptic Effect (Nonlinear Optic Effect)

    V. Theory of the Electrooptic Effect

    VI. Tabulation of Experimental Electrooptic Data

    VII. Electrooptic Device Considerations

    VIII. Conclusions

    List of Symbols

    Note Added in Proof

    References

    Author Index

    Subject Index






Product details

  • No. of pages: 416
  • Language: English
  • Copyright: © Academic Press 1972
  • Published: October 28, 1972
  • Imprint: Academic Press
  • eBook ISBN: 9781483214726

About the Editor

Raymond Wolfe

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