Applied Solid State Science

Applied Solid State Science

Advances in Materials and Device Research

1st Edition - January 1, 1969

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  • Editor: Raymond Wolfe
  • eBook ISBN: 9781483214702

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Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies of MIS diodes that have led to detailed understanding of the silicon-silicon dioxide interface, as well as the devices that can be fabricated by ion implantation in semiconductors are also considered. The book further tackles fundamental mechanisms of electron transport through insulating thin films; mechanisms that influence the design of many thin film; and semiconductor devices. Solid state physicists, materials scientists, electrical engineers, and graduate students working near the subjects being discussed will find the book invaluable.

Table of Contents

  • Contributors to Volume I


    Articles Planned for Future Volumes

    Junction Electroluminescence

    I. Introduction

    II. Energy-Band Description of Electron States in Crystalline Solids

    III. Injection Mechanisms for Electroluminescence in p-n Homojunctions

    IV. Electroluminescence Injection Processes Involving Heterojunctions

    V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices

    VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in Semiconductors

    VII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors

    VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors

    IX. "State of the Art" Efficiencies of Electroluminescent Devices

    X. Future Prospects

    XI. Appendix: A Brief Survey of Very Recent Work


    Metal-Insulator-Semiconductor (MIS) Physics

    I. Introduction

    II. Ideal Metal-Insulator-Semiconductor Diode

    III. Surface States

    IV. Surface-State Measurement Techniques

    V. Charges in the Insulator and Their Effect on the Semiconductor Surface

    VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics

    VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes

    VIII. Carrier Transport in Insulating Films


    Ion Implantation in Semiconductors

    I. Introduction

    II. Ion Range Distributions

    III. Lattice Disorder

    IV. Lattice Location of Implanted Atoms

    V. Electrical Characteristics

    VI. Application of Ion Implantation to Device Fabrication


    Electron Transport through Insulating Thin Films

    I. Introduction

    II. Theory: Barrier-Limited Mechanisms

    III. Theory: Bulk Conduction Phenomena

    IV. Experimental Results: Comparison with Theory


    Author Index

    Subject Index

Product details

  • No. of pages: 416
  • Language: English
  • Copyright: © Academic Press 1969
  • Published: January 1, 1969
  • Imprint: Academic Press
  • eBook ISBN: 9781483214702

About the Editor

Raymond Wolfe

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