Applied Solid State Science - 1st Edition - ISBN: 9780120029013, 9781483214702

Applied Solid State Science

1st Edition

Advances in Materials and Device Research

Editors: Raymond Wolfe
eBook ISBN: 9781483214702
Imprint: Academic Press
Published Date: 1st January 1969
Page Count: 416
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Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies of MIS diodes that have led to detailed understanding of the silicon-silicon dioxide interface, as well as the devices that can be fabricated by ion implantation in semiconductors are also considered. The book further tackles fundamental mechanisms of electron transport through insulating thin films; mechanisms that influence the design of many thin film; and semiconductor devices. Solid state physicists, materials scientists, electrical engineers, and graduate students working near the subjects being discussed will find the book invaluable.

Table of Contents

Contributors to Volume I Preface Articles Planned for Future Volumes Junction Electroluminescence I. Introduction II. Energy-Band Description of Electron States in Crystalline Solids III. Injection Mechanisms for Electroluminescence in p-n Homojunctions IV. Electroluminescence Injection Processes Involving Heterojunctions V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in Semiconductors VII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors IX. "State of the Art" Efficiencies of Electroluminescent Devices X. Future Prospects XI. Appendix: A Brief Survey of Very Recent Work References Metal-Insulator-Semiconductor (MIS) Physics I. Introduction II. Ideal Metal-Insulator-Semiconductor Diode III. Surface States IV. Surface-State Measurement Techniques V. Charges in the Insulator and Their Effect on the Semiconductor Surface VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes VIII. Carrier Transport in Insulating Films References Ion Implantation in Semiconductors I. Introduction II. Ion Range Distributions III. Lattice Disorder IV. Lattice Location of Implanted Atoms V. Electrical Characteristics VI. Application of Ion Implantation to Device Fabrication References Electron Transport through Insulating Thin Films I. Introduction II. Theory: Barrier-Limited Mechanisms III. Theory: Bulk Conduction Phenomena IV. Experimental Results: Comparison with Theory References Author Index Subjec


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© Academic Press 1969
Academic Press
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About the Editor

Raymond Wolfe

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