Advances in Semiconductor Nanostructures

Part I: Low-Dimensional Systems: Theory and Experiment

1. The Theory of Two-Dimensional Electronic Systems

• Abstract
• 1.1 Electron States and Conductivity in a Quantum Well With a Nonideal Boundary
• 1.2 Charged Impurities in a Quantum Well
• 1.3 Two-Dimensional Systems in a Strong Magnetic Field
• 1.4 Photogalvanic Effect and Quantum Pumps
• 1.5 Theory of a Nonadiabatic Quantum Pump
• 1.6 Electron States in Graphene
• 1.7 Excitons in Graphene
• 1.8 Electrons in Curved Low-Dimensional Systems
• 1.9 Collective Effects in Low-Dimensional Systems (Plasma Waves, Wigner Crystallization, Screening)
• 1.10 Screening in Nanostructures
• 1.11 Quasi-One-Dimensional Systems
• 1.12 Double Quantum Well
• 1.13 Multilayer Superlattice
• 1.14 Screening by Dipole Excitons
• References

2. Two-Dimensional Semimetal in HgTe-Based Quantum Wells

• Abstract
• 2.1 Introduction
• 2.2 Quantum Wells Based on HgTe Technology and Structure
• 2.3 Samples and Experimental Technique
• 2.4 The Semimetal State in Wide HgTe Quantum Wells With an Inverted Band Structure: Their Discovery and Nature
• 2.5 Scattering Processes in a Two-Dimensional Semimetal
• 2.6 Quantum Hall Effect
• References

3. Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors

• Abstract
• 3.1 Introduction
• 3.2 Nonlinear Properties of 2D Electron Corbino Disks
• References

4. Silicon-Based Nanoheterostructures With Quantum Dots

• Abstract
• 4.1 Introduction
• 4.2 Homogeneity and Density of the Arrays of QDs
• 4.3 Electronic Structure of Ge/Si QDs
• 4.4 Hole Transport in Dense Arrays of QDs
• 4.5 Spin Phenomena in an Array of Ge/Si QDs
• 4.6 Ge/Si QDs for Near- and Mid-Infrared Photodetection
• Acknowledgments
• References

5. Electron Transport: From Nanostructures to Nanoelectromechanical Systems

• Abstract
• 5.1 Introduction
• 5.2 Electron Transport in Antidot Lattices
• 5.3 Electron Transport in “Star” and “Caterpillar” Billiards
• 5.4 Weak Localization in a Square Antidot Lattice
• 5.5 Mesoscopic Conductance Fluctuations in Sinai Billiards
• 5.6 Hysteretic Magnetoresistance of a Two-Dimensional Electron Gas in the Quantum Hall Effect Regime
• 5.7 Ballistic Effects in a Suspended 2DEG
• 5.8 Suspended 2DEG Structured With an Antidot Lattice
• 5.9 Quantum Hall Effect in Suspended Hall Bars
• 5.10 Suspended Quantum Point Contact
• 5.11 Suspended Single-Electron Transistor
• 5.12 Euler Buckling Instability of Suspended Nanostructures
• 5.13 Nonlinear Dynamics of Suspended Nanostructures
• Acknowledgments
• References

6. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

• Abstract
• 6.1 Introduction
• 6.2 Quantum Point Contacts
• 6.3 Two-Terminal and Three-Terminal Quantum Dots
• 6.4 Small Ring Interferometers
• 6.5 Graphene-Like Lattices of Quantum Antidots and Quantum Dots
• 6.6 Conclusions
• Acknowledgments
• References

7. Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems

• Abstract
• 7.1 Phonons in Semiconductor Superlattices
• 7.2 Plasmon–Phonon Modes in GaAs/AlAs Superlattices
• 7.3 Phonons in QD Structures
• 7.4 Phonons in Nanostructures: From Array Toward a Single Nanostructure
• Acknowledgments
• References

Part II: Surface, Interface, Epitaxy

8. Atomic Processes on the Silicon Surface

• Abstract
• 8.1 Introduction
• 8.2 Experimental Method
• 8.3 Step Motion on Vicinal and Step-Free Si(111) Surfaces During Sublimation
• 8.4 Instability of the Regular Step Train
• 8.5 Step Motion During Si Growth
• 8.6 Step Motion During Oxygen Etching
• 8.7 Initial Stages of Heteroepitaxial Growth on the Si(111) Surface
• 8.8 Step-Bunching Induced by Gold Adsorption on the Si(111) Surface
• 8.9 Conclusion
• Acknowledgment
• References

9. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

• Abstract
• 9.1 Analytical HREM
• 9.2 Automodulation of Chemical Composition in Cd_xHg_1−xTe Films
• 9.3 Nanocrystal Visibility Limits in an Amorphous Matrix
• 9.4 The Geometrical Phase Method for Quantitative Analysis of Crystalline Lattice Deformations
• 9.5 Atomic Structures of Multicomponent Systems
• 9.6 Iron Disilicide in a Silicon Matrix
• Acknowledgments
• References

10. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

• Abstract
• 10.1 Introduction
• 10.2 GaAs Surface Thermal Smoothing Technique
• 10.3 Thermal Smoothing GaAs(001) Surface: Isochronal Anneals at Various Temperatures
• 10.4 GaAs(001) Surface Smoothing Kinetics
• 10.5 MC Simulation of GaAs Step-Terraced Surface Formation
• 10.6 Step-Terraced GaAs(001) Surfaces With Straight Monatomic Steps Induced by Dislocations
• 10.7 Conclusions
• Acknowledgments
• References

11. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism

• Abstract
• 11.1 Introduction
• 11.2 Surface Preparation, Growth of Ge and STM Measurements
• 11.3 Formation Ge Wetting Layer on Si(111)
• 11.4 The Transition from the Wetting Layer to Three-Dimensional Growth of Ge on Si(111)
• 11.5 Formation of a Wetting Layer and Hut-clusters of Ge on Si(001)
• 11.6 Conclusion
• Acknowledgments
• References

12. Molecular Beam Epitaxy of Cd_xHg_1−xTe

• Abstract
• 12.1 Advantages and Problems of MBE MCT
• 12.2 Defects Caused by the Use of Substrates From Nonisovalent Compounds
• 12.3 Processes in the Adsorption Layer at MBE Cd_xHg_1−xTe and CdTe
• 12.4 MBE System for Growing Narrow-Gap Solid Solutions Containing Mercury
• 12.5 Growing Heteroepitaxial MCT Structures on a GaAs Substrate
• 12.6 The Homogeneity of the Composition and Electrical Properties of Heteroepitaxial of MCT on a GaAs Substrate
• 12.7 Conclusion
• References

13. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

• Abstract
• 13.1 Introduction
• 13.2 Experimental Details
• 13.3 Epitaxial Ge Growth on Bare and Oxidized Si(001) Substrates in the Middle Temperature Range
• 13.4 Surface Morphologies Obtained by Ge Deposition on Si(001) at High Temperatures
• 13.5 Ge Epitaxial Growth on Si(111) Substrates in the Middle Temperature Range
• 13.6 High-Temperature Structures of SiGe on Si(111)
• 13.7 Surface Morphologies After Deposition of Large Ge Coverages
• Acknowledgments
• References

14. Monte Carlo Simulation of Semiconductor Nanostructure Growth

• Abstract
• 14.1 Introduction
• 14.2 Silicon Nanoclusters in Silicon Dioxide
• 14.3 Nanowhisker Growth
• 14.4 Si Nanowhiskers
• 14.5 Au-Catalyzed and Self-Catalyzed GaAs Nanowhisker Growth
• References

Part III: Radiation Effects on Semiconductor Structures

15. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

• Abstract
• 15.1 Introduction
• 15.2 Heating and Cooling During Laser Annealing
• 15.3 Solid-Phase Crystallization
• 15.4 Melting and Liquid-Phase Crystallization
• 15.5 Self-Sustained (Explosive) Crystallization
• 15.6 Dopant Element Solubility and Spatial Distribution
• 15.7 Melting of Nanocrystals Embedded in a Crystal Matrix
• 15.8 Conclusions
• References

16. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

• Abstract
• 16.1 Introduction
• 16.2 Basic Results of Point Defect Aggregation in Silicon Obtained by In Situ HVEM
• 16.3 Ordering of Close Correlated I-V Pairs in Si in {113} Planes
• 16.4 Vs and Is Aggregation in the {113} Plane in Si Foils Covered With Si₃N₄ Films
• 16.5 V₂-2I Cluster Aggregation in the {113} Plane in Si Under Hot Implantation of Erbium Ions
• 16.6 Conclusions
• Acknowledgment
• References

17. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer

• Abstract
• 17.1 Introduction
• 17.2 Ion-Beam Synthesis of SOI Structures
• 17.3 Wafer Bonding and Hydrogen Transfer
• 17.4 Nanometer-Thick SOI Structures
• 17.5 SOI Structures With the Nitrogenated Buried SiO₂ Layer
• 17.6 SOI Structures With a Ge Layer Embedded on the Si/SiO₂ Interface
• 17.7 Conclusion
• References

Part IV: Electronic Advanced Materials

18. Superminiature Radiation Sources Based on Semiconductor Nanostructures

• Abstract
• 18.1 Vertical Cavity Surface-Emitting Lasers
• 18.2 Single-Photon Emitters
• 18.3 Emitters of Entangled Photon Pairs
• 18.4 Conclusion
• Acknowledgment
• References

19. Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications

• Abstract
• 19.1 The Technology of 3D Nanostructures
• 19.2 Nanoimprint Lithography
• 19.3 Electromagnetic Nanomaterials
• 19.4 Polymer Nanomaterials
• 19.5 Sensors and Actuators
• 19.6 Growth and Functionalization of Graphene Structures
• 19.7 Quantum Properties of 3D Semiconductor Nanostructures
• Acknowledgments
• References

20. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

• Abstract
• 20.1 ReRAM: the Next Generation of Non-Volatile Memory
• 20.2 ReRAM Element Fabrication and Characterization
• 20.3 Transport Properties in High Resistance State
• 20.4 Electronic Structure of Defects in the Active Layers of ReRAM Element
• 20.5 Transport Properties in Low Resistance State
• 20.6 Conclusion
• Acknowledgment
• References

21. The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures

• Abstract
• 21.1 Multisplitting Filter-Multiplexer
• 21.2 Conclusions
• Acknowledgments
• References