Advances in Semiconductor Nanostructures - 1st Edition - ISBN: 9780128105122, 9780128105139

Advances in Semiconductor Nanostructures

1st Edition

Growth, Characterization, Properties and Applications

Editors: Alexander Latyshev Anatoliy Dvurechenskii Alexander Aseev
Paperback ISBN: 9780128105122
eBook ISBN: 9780128105139
Imprint: Elsevier
Published Date: 30th November 2016
Page Count: 552
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

Key Features

  • Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
  • Covers recent developments in the field from all over the world
  • Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries


Researchers and scientists in academia, and postgraduate students in semiconductor physics, condensed matter physics, physics of nanostructures

Table of Contents

Part I: Low-Dimensional Systems: Theory and Experiment

1. The Theory of Two-Dimensional Electronic Systems

  • Abstract
  • 1.1 Electron States and Conductivity in a Quantum Well With a Nonideal Boundary
  • 1.2 Charged Impurities in a Quantum Well
  • 1.3 Two-Dimensional Systems in a Strong Magnetic Field
  • 1.4 Photogalvanic Effect and Quantum Pumps
  • 1.5 Theory of a Nonadiabatic Quantum Pump
  • 1.6 Electron States in Graphene
  • 1.7 Excitons in Graphene
  • 1.8 Electrons in Curved Low-Dimensional Systems
  • 1.9 Collective Effects in Low-Dimensional Systems (Plasma Waves, Wigner Crystallization, Screening)
  • 1.10 Screening in Nanostructures
  • 1.11 Quasi-One-Dimensional Systems
  • 1.12 Double Quantum Well
  • 1.13 Multilayer Superlattice
  • 1.14 Screening by Dipole Excitons
  • References

2. Two-Dimensional Semimetal in HgTe-Based Quantum Wells

  • Abstract
  • 2.1 Introduction
  • 2.2 Quantum Wells Based on HgTe Technology and Structure
  • 2.3 Samples and Experimental Technique
  • 2.4 The Semimetal State in Wide HgTe Quantum Wells With an Inverted Band Structure: Their Discovery and Nature
  • 2.5 Scattering Processes in a Two-Dimensional Semimetal
  • 2.6 Quantum Hall Effect
  • References

3. Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors

  • Abstract
  • 3.1 Introduction
  • 3.2 Nonlinear Properties of 2D Electron Corbino Disks
  • References

4. Silicon-Based Nanoheterostructures With Quantum Dots

  • Abstract
  • 4.1 Introduction
  • 4.2 Homogeneity and Density of the Arrays of QDs
  • 4.3 Electronic Structure of Ge/Si QDs
  • 4.4 Hole Transport in Dense Arrays of QDs
  • 4.5 Spin Phenomena in an Array of Ge/Si QDs
  • 4.6 Ge/Si QDs for Near- and Mid-Infrared Photodetection
  • Acknowledgments
  • References

5. Electron Transport: From Nanostructures to Nanoelectromechanical Systems

  • Abstract
  • 5.1 Introduction
  • 5.2 Electron Transport in Antidot Lattices
  • 5.3 Electron Transport in “Star” and “Caterpillar” Billiards
  • 5.4 Weak Localization in a Square Antidot Lattice
  • 5.5 Mesoscopic Conductance Fluctuations in Sinai Billiards
  • 5.6 Hysteretic Magnetoresistance of a Two-Dimensional Electron Gas in the Quantum Hall Effect Regime
  • 5.7 Ballistic Effects in a Suspended 2DEG
  • 5.8 Suspended 2DEG Structured With an Antidot Lattice
  • 5.9 Quantum Hall Effect in Suspended Hall Bars
  • 5.10 Suspended Quantum Point Contact
  • 5.11 Suspended Single-Electron Transistor
  • 5.12 Euler Buckling Instability of Suspended Nanostructures
  • 5.13 Nonlinear Dynamics of Suspended Nanostructures
  • Acknowledgments
  • References

6. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

  • Abstract
  • 6.1 Introduction
  • 6.2 Quantum Point Contacts
  • 6.3 Two-Terminal and Three-Terminal Quantum Dots
  • 6.4 Small Ring Interferometers
  • 6.5 Graphene-Like Lattices of Quantum Antidots and Quantum Dots
  • 6.6 Conclusions
  • Acknowledgments
  • References

7. Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems

  • Abstract
  • 7.1 Phonons in Semiconductor Superlattices
  • 7.2 Plasmon–Phonon Modes in GaAs/AlAs Superlattices
  • 7.3 Phonons in QD Structures
  • 7.4 Phonons in Nanostructures: From Array Toward a Single Nanostructure
  • Acknowledgments
  • References

Part II: Surface, Interface, Epitaxy

8. Atomic Processes on the Silicon Surface

  • Abstract
  • 8.1 Introduction
  • 8.2 Experimental Method
  • 8.3 Step Motion on Vicinal and Step-Free Si(111) Surfaces During Sublimation
  • 8.4 Instability of the Regular Step Train
  • 8.5 Step Motion During Si Growth
  • 8.6 Step Motion During Oxygen Etching
  • 8.7 Initial Stages of Heteroepitaxial Growth on the Si(111) Surface
  • 8.8 Step-Bunching Induced by Gold Adsorption on the Si(111) Surface
  • 8.9 Conclusion
  • Acknowledgment
  • References

9. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

  • Abstract
  • 9.1 Analytical HREM
  • 9.2 Automodulation of Chemical Composition in CdxHg1−xTe Films
  • 9.3 Nanocrystal Visibility Limits in an Amorphous Matrix
  • 9.4 The Geometrical Phase Method for Quantitative Analysis of Crystalline Lattice Deformations
  • 9.5 Atomic Structures of Multicomponent Systems
  • 9.6 Iron Disilicide in a Silicon Matrix
  • Acknowledgments
  • References

10. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

  • Abstract
  • 10.1 Introduction
  • 10.2 GaAs Surface Thermal Smoothing Technique
  • 10.3 Thermal Smoothing GaAs(001) Surface: Isochronal Anneals at Various Temperatures
  • 10.4 GaAs(001) Surface Smoothing Kinetics
  • 10.5 MC Simulation of GaAs Step-Terraced Surface Formation
  • 10.6 Step-Terraced GaAs(001) Surfaces With Straight Monatomic Steps Induced by Dislocations
  • 10.7 Conclusions
  • Acknowledgments
  • References

11. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism

  • Abstract
  • 11.1 Introduction
  • 11.2 Surface Preparation, Growth of Ge and STM Measurements
  • 11.3 Formation Ge Wetting Layer on Si(111)
  • 11.4 The Transition from the Wetting Layer to Three-Dimensional Growth of Ge on Si(111)
  • 11.5 Formation of a Wetting Layer and Hut-clusters of Ge on Si(001)
  • 11.6 Conclusion
  • Acknowledgments
  • References

12. Molecular Beam Epitaxy of CdxHg1−xTe

  • Abstract
  • 12.1 Advantages and Problems of MBE MCT
  • 12.2 Defects Caused by the Use of Substrates From Nonisovalent Compounds
  • 12.3 Processes in the Adsorption Layer at MBE CdxHg1−xTe and CdTe
  • 12.4 MBE System for Growing Narrow-Gap Solid Solutions Containing Mercury
  • 12.5 Growing Heteroepitaxial MCT Structures on a GaAs Substrate
  • 12.6 The Homogeneity of the Composition and Electrical Properties of Heteroepitaxial of MCT on a GaAs Substrate
  • 12.7 Conclusion
  • References

13. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

  • Abstract
  • 13.1 Introduction
  • 13.2 Experimental Details
  • 13.3 Epitaxial Ge Growth on Bare and Oxidized Si(001) Substrates in the Middle Temperature Range
  • 13.4 Surface Morphologies Obtained by Ge Deposition on Si(001) at High Temperatures
  • 13.5 Ge Epitaxial Growth on Si(111) Substrates in the Middle Temperature Range
  • 13.6 High-Temperature Structures of SiGe on Si(111)
  • 13.7 Surface Morphologies After Deposition of Large Ge Coverages
  • Acknowledgments
  • References

14. Monte Carlo Simulation of Semiconductor Nanostructure Growth

  • Abstract
  • 14.1 Introduction
  • 14.2 Silicon Nanoclusters in Silicon Dioxide
  • 14.3 Nanowhisker Growth
  • 14.4 Si Nanowhiskers
  • 14.5 Au-Catalyzed and Self-Catalyzed GaAs Nanowhisker Growth
  • References

Part III: Radiation Effects on Semiconductor Structures

15. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

  • Abstract
  • 15.1 Introduction
  • 15.2 Heating and Cooling During Laser Annealing
  • 15.3 Solid-Phase Crystallization
  • 15.4 Melting and Liquid-Phase Crystallization
  • 15.5 Self-Sustained (Explosive) Crystallization
  • 15.6 Dopant Element Solubility and Spatial Distribution
  • 15.7 Melting of Nanocrystals Embedded in a Crystal Matrix
  • 15.8 Conclusions
  • References

16. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

  • Abstract
  • 16.1 Introduction
  • 16.2 Basic Results of Point Defect Aggregation in Silicon Obtained by In Situ HVEM
  • 16.3 Ordering of Close Correlated I-V Pairs in Si in {113} Planes
  • 16.4 Vs and Is Aggregation in the {113} Plane in Si Foils Covered With Si3N4 Films
  • 16.5 V2-2I Cluster Aggregation in the {113} Plane in Si Under Hot Implantation of Erbium Ions
  • 16.6 Conclusions
  • Acknowledgment
  • References

17. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer

  • Abstract
  • 17.1 Introduction
  • 17.2 Ion-Beam Synthesis of SOI Structures
  • 17.3 Wafer Bonding and Hydrogen Transfer
  • 17.4 Nanometer-Thick SOI Structures
  • 17.5 SOI Structures With the Nitrogenated Buried SiO2 Layer
  • 17.6 SOI Structures With a Ge Layer Embedded on the Si/SiO2 Interface
  • 17.7 Conclusion
  • References

Part IV: Electronic Advanced Materials

18. Superminiature Radiation Sources Based on Semiconductor Nanostructures

  • Abstract
  • 18.1 Vertical Cavity Surface-Emitting Lasers
  • 18.2 Single-Photon Emitters
  • 18.3 Emitters of Entangled Photon Pairs
  • 18.4 Conclusion
  • Acknowledgment
  • References

19. Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications

  • Abstract
  • 19.1 The Technology of 3D Nanostructures
  • 19.2 Nanoimprint Lithography
  • 19.3 Electromagnetic Nanomaterials
  • 19.4 Polymer Nanomaterials
  • 19.5 Sensors and Actuators
  • 19.6 Growth and Functionalization of Graphene Structures
  • 19.7 Quantum Properties of 3D Semiconductor Nanostructures
  • Acknowledgments
  • References

20. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

  • Abstract
  • 20.1 ReRAM: the Next Generation of Non-Volatile Memory
  • 20.2 ReRAM Element Fabrication and Characterization
  • 20.3 Transport Properties in High Resistance State
  • 20.4 Electronic Structure of Defects in the Active Layers of ReRAM Element
  • 20.5 Transport Properties in Low Resistance State
  • 20.6 Conclusion
  • Acknowledgment
  • References

21. The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures

  • Abstract
  • 21.1 Multisplitting Filter-Multiplexer
  • 21.2 Conclusions
  • Acknowledgments
  • References


No. of pages:
© Elsevier 2017
30th November 2016
Paperback ISBN:
eBook ISBN:

About the Editor

Alexander Latyshev

Professor Alexander V. Latyshev is Director of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics, crystal growth, nanoheterostructures, electron&ion beam lithography, crystallography, structural diagnostics, and electron and atomic force microscopies. In particular Latyshev's research interests include various modes of electron microscopy and their applications to diagnostic and the study of semiconductor and metal surfaces. He is particularly interested in the field of ultra high vacuum reflection electron microscopy (UHV-REM) for in situ studies of the kinetic and structural processes during the sublimation, phase transition, initial stages of epitaxy and surface gas reaction. He is one of the pioneers, who revived this method and applied to various problems of surface science in Russia. He has published over 200 papers, seven book chapters (in English) and two monographs (in Russian). He has received several scientific awards includingthe RAS Corresponding Member and the Russian Federation Government Prize in Education in the field of optoelectronics.

Affiliations and Expertise

Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia

Anatoliy Dvurechenskii

Professor Anatoliy V. Dvurechenskii is Deputy Director for Science of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. His main research interests are in the field of atomic and electronic structure of point defects induced by fast electrons and ion beam irradiation; ion-beam assisted phase transition, crystal nucleation and growth; laser annealing, melting, solidification; electronic and optical phenomena in disordered system and low dimensional structures. His current research direction is quantum dot heterostructures: nanocrystal nucleation and growth with molecular beam epitaxy, pulsed ion beam action, pulsed laser annealing, electron transport and optical and spin phenomena in quantum dot heterostructures, nanoelectronics and nanophotonics, nanodevices. He has been awarded with the State Prize, the top honor of the Soviet Union in Science, for having carried out research on physical phenomena at pulsed laser annealing of thin semiconductor’s layers; the International prize of the Academies of Science of Soviet Union and German Democratic Republic, for research on ion implantation into semiconductors; and the Russian Federation Government Prize in the field of education, for the development of the system for training highly qualified researchers in the field of optoelectronics.In 2008 he was elected to Russian Academy of Science as corresponding member. He is a member of scientific boards in the Russian Academy of Science on the problems of “Radiation Physics of Solid State” and “Physics of Semiconductors.” Prof Dvurechenskii has published his research in more than 380 journal publications and nine book chapters.

Affiliations and Expertise

Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia

Alexander Aseev

Professor Alexander L. Aseev is Chair of the Siberian Branch of the Russian Academy of Science, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics of micro-, nano- and optoelectronics, including the study of the atomic structure and electronic properties of semiconductor surfaces and interfaces. He has obtained new results about the metastable point defects configuration role at reaction with surfaces, dislocations, and defects. He has found reversible transitions of the system regularly spaced monatomic steps during sublimation and growth superstructural domains. He has published over 200 papers anb five monographs and he has nine patents. He has received several scientific awards including the RAS Academician and the Russian Federation Government Prize in Education in the field of optoelectronics.

Affiliations and Expertise

Russian Academy of Science, Siberian Branch, Novosibirsk, Russia

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