Advances in Non-volatile Memory and Storage Technology - 2nd Edition - ISBN: 9780081025840

Advances in Non-volatile Memory and Storage Technology

2nd Edition

Editors: Yoshio Nishi Blanka Magyari-Kope
Paperback ISBN: 9780081025840
Imprint: Woodhead Publishing
Published Date: 24th June 2019
Page Count: 684
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Table of Contents

Part 1: Progress in nonvolatile memory research and application
1. OxRAM technology development and performance
2. Advances in RRAM materials and devices
3. Ab initio modeling of RRAM device characteristics
4. Advanced modeling and characterization techniques for innovative memory devices
5. What is a memristor?
6. Mechanisms of memristive switching in OxRAM
7. Interface effects on memristive devices
8. STT-MRAM and SOT-MRAM devices
9. Advances in STT-MRAM technology
10. Advances in 3D NAND flash memory
11. Advances in conductive bridge memory technology
12. Advances in selector devices

Part 2: Emerging opportunities
13. Advances in HfO2 based FeRAM
14. FeRAM
15. Advances in nanowire PCRAM
16. Flexible and transparent RERAM devices for system on panel application
17. Memristor applications for computing
18. Neuromorphic technologies
19. Neuromorphic computing with resistive switching memory devices


Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.

This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.

Key Features

  • Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
  • Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
  • Examines improvements to flash technology, charge trapping and resistive random access memory


Academic researchers and R&D professionals in materials science, physics, and engineering


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© Woodhead Publishing 2019
Woodhead Publishing
Paperback ISBN:

Ratings and Reviews

About the Editors

Yoshio Nishi Editor

Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA

Affiliations and Expertise

Stanford University, USA

Blanka Magyari-Kope Editor

Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles

Affiliations and Expertise

Stanford University, USA