Advances in Chemical Mechanical Planarization (CMP)

Advances in Chemical Mechanical Planarization (CMP)

1st Edition - January 8, 2016

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  • Editor: Suryadevara Babu
  • eBook ISBN: 9780081002186
  • Hardcover ISBN: 9780081001653

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Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.

Key Features

  • Considers techniques and processes for CMP of dielectric and metal films
  • Includes chapters devoted to CMP for particular materials
  • Addresses consumables and process control for improved CMP


postgraduate students and academic researchers in electronics, semiconductors and nanotechnology, physics, chemistry, materials science and engineering; R&D managers or design and test engineers in industrial sectors such as semiconductors, integrated circuits, memory devices, MEMS, and nanoelectronics.

Table of Contents

  • Introduction

    Part I CMP of dielectric and metal films

    1 Chemical and physical mechanisms of dielectric CMP

    2 Cu CMP Challenges in 22 nm BEOL and beyond

    3 Electrochemical techniques and their applications for CMP of metal films

    4 Ultra low-k materials and CMP

    5 CMP processing of high-mobility channel materials; alternatives to Si

    6 Multiscale modeling of CMP

    7 Chemical mechanical polishing (CMP) of silicon carbide (SiC)

    8 Chemical and physical mechanisms of CMP of gallium nitride

    9 Abrasive-free and ultralow abrasive CMP processes

    10 Environmental aspects of planarization processes

    Part II Consumables and Process Control for Improved CMP

    11 Preparation and characterization of slurry for CMP

    12 Chemical Metrology Methods for CMP Quality

    13 Diamond Disc Pad Conditioning in Chemical Mechanical Polishing

    14 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

    15 A novel slurry injection system for CMP

    16 CMP removal rate uniformity and role of carrier parameters

    17 Approaches to defect characterization, mitigation and reduction

    18 Applications of CMP to More than Moore Devices

    19 CMP for phase change materials

Product details

  • No. of pages: 536
  • Language: English
  • Copyright: © Woodhead Publishing 2016
  • Published: January 8, 2016
  • Imprint: Woodhead Publishing
  • eBook ISBN: 9780081002186
  • Hardcover ISBN: 9780081001653

About the Editor

Suryadevara Babu

Suryadevara Babu is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, NY, USA. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.

Affiliations and Expertise

Clarkson University, Potsdam, NY, USA

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