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1. 2D Semiconductor TMDCs: Basic Properties
2. Novel Phenomena in 2D Semiconductors
3. CVD Growth of 2D Semiconductors
4. MBE Growth of 2D Semiconductors
5. Optical Characterisation of 2D Semiconductors
6. HRTEM Characterisation – Structure and Defects
7. STM/STS and ARPES Characterisation – Structure and Electronic Properties
8. Reducing the dimensionality of novel materials
9. 2D Electronic and Photonic Devices
2D Semiconductor Materials and Devices reviews the basic science and state-of-art technology of 2D semiconductor materials and devices. Chapters discuss the basic structure and properties of 2D semiconductor materials, including both elemental (silicene, phosphorene) and compound semiconductors (transition metal dichalcogenide), the current growth and characterization methods of these 2D materials, state-of-the-art devices, and current and potential applications.
- Reviews a broad range of emerging 2D electronic materials beyond graphene, including silicene, phosphorene and compound semiconductors
- Provides an in-depth review of material properties, growth and characterization aspects—topics that could enable applications
- Features contributions from the leading experts in the field
Materials Science and Engineering, Physicists, Chemists in R&D and academia
- No. of pages:
- © Elsevier 2019
- 19th October 2019
- Paperback ISBN:
- eBook ISBN:
Dongzhi Chi is Principal Scientist and Senior Research Councillor of the Strategic Research Office at the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A-STAR), Singapore. His research interests include electronic materials for semiconductor device applications including 2D TMDCs, III-V semiconductors, silicides, germanides, high-k dielectrics and their integration into novel electronic devices. He has 262 technical papers published in refereed international journals, has given 60 presentations at international conferences, and has 13 patent applications.
Principal Scientist, Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A-STAR), Singapore
K. E. Johnson Goh is based at the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A-STAR), Singapore. He is the joint program manager of the A-STAR Pharos “Semiconducting 2D Materials for Ubiquitous Electronics” project, and principal investigator for the “Spin-valley Qubits” and “2D Valleytronics” projects. His research interests include 2D materials and quantum computation and information. Dr. Goh has 59 publications in refereed journals and has given 85 presentations at conferences and workshops.
Senior Scientist, Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A-STAR), Singapore; Adjunct Associate Professor, National University of Singapore (NUS), Singapore
Professor Andrew Wee is the Class of ’62 Professor of Physics and Vice President (University and Global Relations) at the National University of Singapore. He is also Past President of the Singapore National Academy of Science. Prof. Wee’s research interests are in surface and nanoscale science, scanning tunnelling microscopy and synchrotron radiation studies of the molecule-substrate interface, graphene and related nanomaterials. He has published more than 600 internationally refereed scientific papers and has served as the Associate Editor of the journal ACS Nano since 2011.
Professor, National University of Singapore (NUS), Singapore
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