Growth, Processing, Characterization, and Devices To order this title, and for more information, click here
By Paul H. Holloway, Microelectronics Center of North Carolina, Research Triangle, USA Gary E. Haber
Description This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound
semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or
homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Audience
Scientists, researchers, and technicians in the microelectronic and optoelectronic industries.
Contents 1. Bulk Crystal Growth
Introduction
1.0 Reduction of Dislocation Density
2.0 HB GaAs
3.0 LEC GaAs
4.0 InP
5.0 Summary
References
2. MOCVD of Compound Semiconductor Layers
1.0 Introduction
2.0 Growth Process
3.0 Specific Material Systems
4.0 Summary and Future
Directions
Acknowledgment
References
3. Molecular Beam Epitaxy
1.0 Introduction
2.0 Important Features of MBE
3.0 MBE System
Configuration
4.0 The Growth Chamber Components
5.0 Reflection High Energy Electron Diffraction (RHEED)
6.0 Mass Spectrometry
7.0 In-Situ Auger Electron Spectroscopy (AES)
8.0 Optical Methods for Real-Time Growth Monitoring
9.0 Growth of III-V Compounds
10.0 Post-Growth Characterization
11.0 Building Blocks of Modern Devices: Bandgap Engineering in III-V Structures
12.0 Epilogue
Acknowledgments
References
4. Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials
1.0 Introduction
2.0 Fundamentals Ohmic Contacts
3.0 Design Concepts of Processing Ohmic Contact to InP
4.0 Ohmic Contact Processing Technology
5.0 Conclusions
Acknowledgments
References
5. Surface Processing of III-V Semiconductors
1.0 Introduction
2.0 Reactions on
Cleaved (110) Surfaces
3.0 Effects of Air-Formed Contamination on Interface Characteristics
4.0 Contamination Removal
5.0 Surface
Passivation
6.0 Applications
7.0 Summary and Conclusions
Acknowledgments
References
6. Ion Implantation Induced Extended Defects
in GaAs
1.0 Type I Defects
2.0 Type II Defects
3.0 Type III Defects
4.0 Type IV Defects
5.0 Type V Defects
6.0 Conclusions
References
7. Passivation of GaAs and InP
1.0 Surface Defects, Fermi-Level Pinning, and Defect Models
2.0 Native Oxides
3.0 Hydrogen
and Nitrogen
4.0 Sulfur
5.0 Selenium
6.0 Silicon
7.0 Epitaxial Regrowth
8.0 Epilogue
Acknowledgments
References
8. Wet
and Dry Etching of Compound Semiconductors
1.0 Introduction
2.0 Wet Chemical Etching
3.0 Plasma Etching
4.0 Conclusion
Acknowledgments
References
9. Rapid Isothermal Processing (RIP)
1.0 Introduction
2.0 Why Rapid Isothermal Processing?
3.0 History of Rapid Isothermal
Processing
4.0 Scope of Rapid Isothermal Processing
5.0 Principles of Rapid Isothermal Processing
6.0 Experimental Results in Support
of Photoeffects in RIP
7.0 Design of Equipment and Engineering Issues
8.0 Various Applications of RIP
9.0 Results of Various Devices
and Circuits
10.0 Future Applications
11.0 Conclusion
Acknowledgment
References
10. Epitaxial Lift-Off for Thin Film Compound
Semiconductor Devices
1.0 Introduction
2.0 Thin Film Device Formation and Bonding
3.0 Characterization of ELO Thin Films
4.0
New Thin Film Characterization Techniques and Devices
5.0 New Integration Formulations Using Thin Films
6.0 Conclusions
References
11. Packaging
1.0 Introduction
2.0 III-V Optoelectronic Device Packages
3.0 Multichannel Device Packages for Optical Interconnect
Applications
4.0 High Frequency GaAs Digital and Microwave Integrated Circuit Packages
5.0 Conclusions
References
12. Chemical,
Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and
Diffraction Techniques
1.0 Introduction
2.0 X-Ray Photoelectron Spectroscopy and Diffraction
3.0 Chemistry of Surface and Interface
Formation
4.0 Determination of Electronic Energy Levels at Compound Semiconductor Surfaces and Interfaces by XPS
5.0 Structure of
the Near-Surface Region by XPD
6.0 Conclusions
Acknowledgment
References
13. Characterization of Compound Semiconductor Material
by Ion Beams
1.0 Introduction
2.0 Rutherford Backscatterring Spectrometry (RBS)
3.0 Secondary Ion Mass Spectrometry (SIMS) and
Related Techniques
4.0 Summary
References
14. Optical Characterization of Compound Semiconductors
1.0 Introduction
2.0 Experimental
Techniques and Instrumentation
3.0 Basic Theory and Approaches
4.0 Applications
5.0 Summary
Acknowledgments
List of Acronyms
References
15. Gallium Arsenide Microelectronic Devices and Circuits
1.0 A Brief Historical Perspective
2.0 Gallium Arsenide Crystals
3.0 Gallium Arsenide Devices and Structures
4.0 GaAs MESFET IC Fabrication Technology
5.0 Applications of GaAs MESFET ICs
References
16. Optoelectronic Devices
1.0 Introduction
2.0 The Solid State Laser
3.0 Modulators and Switches
4.0 Optoelectronic Integrated
Circuits (OEICs)
Acknowledgments
References
Index
Bibliographic details
Hardbound, 926 pages, publication date: DEC-1996
ISBN-13: 978-0-8155-1374-2
ISBN-10: 0-8155-1374-7
Imprint: WILLIAM ANDREW
Price and Ordering
Price: GBP 117.99 USD 195 EUR 138.95
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