Fundamentals and Technology To order this title, and for more information, click here
By Leonard J. Brillson, Center for Materials Research, The Ohio State University
Description The authors present the state of the art in growing, processing, and characterizing electronic junctions. Overall, they have assembled
a broad array of the latest semiconductor interface science and technology, ranging from advanced ohmic, Schottky, and heterojunction
contacts to the refined perspectives of microscopic junctions gleaned from ultrahigh vacuum surface science techniques. Considerable
progress has been made in these areas over the last few years. This book is intended for technologists and solid state researchers alike.
Audience
Technologists and solid state researchers in the semiconductor industry.
Contents 1. Ohmic Contacts to GaAs and Other III-V Compounds: Correlation of Microstructure with Electrical Properties
1.0 Electrical Properties
of Ohmic Contacts
2.0 In-Situ Epitaxial Growth of Interlayers for Ohmic Contacts to n-GaAs
3.0 Correlational Studies of Interfacial
Microstructure and AuGeNi Ohmic Contact Resistance
4.0 Interfacial Epitaxial Layer Formation by Limited Reactions for Ohmic Contact
Formation to n-GaAs
5.0 Ohmic Contacts to p-GaAs
6.0 Ohmic Contacts to Other III-V Compounds
7.0 Future Directions
References
2. Stable and Epitaxial Contacts to III-V Compound Semiconductors
1.0 Introduction
2.0 Criteria for the Metal Layer: How Does One
Choose the Ideal Metallization?
3.0 Growth of III-V/M/III-V Structures
4.0 Growth of the Thermodynamically Stable Metallic Compounds
5.0 Growth of Other Epitaxial Intermetallic Compounds
6.0 Properties of EPI-Metallic Films
7.0 Fundamentals of Schottky Barrier
Formation
8.0 Conclusions
References
3. Schottky Barriers and Ohmic Contacts to Silicon
1.0 Introduction
2.0 Schottky Barrier
Fundamentals
3.0 Fabrication of Schottky Diodes on Silicon
4.0 SBH'S of Non-Epitaxial Metals and Silicides
5.0 SBH Anomalies: Interface
States or SBH
6.0 Non-Epitaxial SBH Trends and Models
7.0 Study of SB Mechanisms Through Epitaxial Silicides
8.0 Technologically
Important Contacts to Silicon
9.0 Summary
Glossary of Notation and Symbols
References
4. Insulator/Semiconductor Contacts
1.0
Introduction
2.0 Metal-Insulator-Semiconductor (MIS) Structures
3.0 The Si/SiO2 Interface
4.0 Gallium Arsenide-Insulator Interfaces
5.0 Indium Phosphide-Insulator Interface
6.0 Heterojunction Quasi-Insulator Interfaces
7.0 Some Afterthoughts
References
5. Interface
States
1.0 Introduction
2.0 Trapped Charge at Interfaces
3.0 Modern Interface State Characterization
4.0 Intrinsic States
5.0
Extrinsic States: Conventional
6.0 Extrinsic States: Interface Specific
7.0 Interface State Control
8.0 Future Directions
9.0
Summary
References
6. Atomic Structure of Metal/GaAs Interfaces: The Role of Defects, Epitaxy, and Morphology
1.0 Introduction
2.0 Interface Formation and Resulting Microstructure
3.0 Contact Stability
4.0 Near-Interfacial Stoichiometry
5.0 Near-Interfacial
Electrically Active Defects
6.0 Conclusions
References
7. Atomic-Scale Chemistry of Metal-Semiconductor Interfaces
1.0 Introduction
2.0 Interface Morphologies
3.0 Experimental Probes
4.0 Data Analysis and Experimental Details
5.0 Room Temperature Metal-Semiconductor
Interface Formation
6.0 Low Temperature Metal-Semiconductor Interface Formation
7.0 Abrupt Interfaces Formed by Cluster Deposition
8.0 Interfaces Formed by Ion Deposition
9.0 Recent Results and Final Comments
References
8. Survey of Recent Developments in the
Theoretical Description of the Properties of Semiconductor Interfaces
1.0 Introduction
2.0 Model Concepts, Methods, and Accomplishments
3.0 Semiconductor Vacuum Interfaces
4.0 Semiconductor Heterojunctions
5.0 Metal-Semiconductor Contacts
6.0 Synopsis
References
9. Atomic-Scale Control of Heterojunction Band Lineups
1.0 Introduction
2.0 Control of Band Lineups: General Status
3.0 Modifications
of Heterojunction Band Lineups by Intralayers
4.0 Creation of Homojunction Band Offsets Via Dipole Intralayers
5.0 Detailed Discussion
of Theoretical Models for Dipole Intralayers
References
Index
Bibliographic details
Hardbound, 702 pages, publication date: DEC-1993
ISBN-13: 978-0-8155-1336-0
ISBN-10: 0-8155-1336-4
Imprint: WILLIAM ANDREW
Price and Ordering
Price: GBP 117.99 USD 195 EUR 138.95
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