Edited by
Constantinos Christofides, University of Cyprus
Gerard Ghibaudo, Labaratoire de Physique des Composants a Semiconducteur
Series Editor:
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
Eicke Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced
with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing
characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material
and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics
of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information
on annealing kinetics is also presented.
Included in series
Semiconductors and Semimetals
Audience:
Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.
