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| EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS: OPTICAL AND PHOTOTHERMAL CHARACTERIZATION, 46
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Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
Constantinos Christofides, University of Cyprus
Eicke Weber, University of California, Berkeley, U.S.A.
Gerard Ghibaudo, Labaratoire de Physique des Composants a Semiconducteur
Included in series
Semiconductors and Semimetals,
Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced
with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing
characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material
and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics
of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information
on annealing kinetics is also presented.
Audience
Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.
Contents
Optical Characterization:
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis.A. Seas and C. Christofides,
Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors.A. Othonos, Photoluminescence and Raman Scattering
of Ion Implanted Semiconductors: Influence of Annealing.
Thermal Wave Analyses:
C. Cristofides, Photomodulated
Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects.U. Zammit, Photothermal Delection Spectroscopy
Characterization of Ion-Implanted and Annealed Si Films.A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient
Spectroscopy of Impurities and Defects in Semiconductors.
Quantum Well Structures and Compound Systems:
R. Kalish
and S. Charbonneau, Ion Implantation into Quantum Well Structures.A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation
and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors.
Subject Index.
| Bibliographic details |
Hardbound, 316 pages, publication date: MAY-1997
ISBN-13: 978-0-12-752146-6
ISBN-10: 0-12-752146-1
Imprint: ACADEMIC PRESS
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Last update: 3 Oct 2009
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