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| FROM PHYSICS TO DEVICES: LIGHT EMISSIONS IN SILICON, 49
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Light Emissions in Silicon: From Physics to Devices
To order this title, and for more information, click here
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
David Lockwood, National Research Council, Institute of Microstructure Sciences
Eicke Weber, University of California, Berkeley, U.S.A.
Included in series
Semiconductors and Semimetals,
Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished
itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time
of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the
University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor
materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes.
Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures,
High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even
expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and
Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers
in modern industry.
Audience
Libraries, researchers, graduate students and practitioners in materials science (electronic materials field), and electrical engineering (field of electronic devices).
Contents
D.J. Lockwood, Light Emission in Silicon. G. Abstreiter, Light Emission in Si/Ge Atomic Layer Structures. T.G. Brown
and D.G. Hall, Radiative Isoelectronic Impurities in Silicon and Silicon–Germanium Alloys and Superlattices. J. Michel,
L.V.C. Assali, M.T. Morse, and L.C. Kimerling, Erbium in Silicon. Y. Kanemitsu, Silicon and Germanium Nanoparticles. P.M.
Fauchet, Porous Silicon: Photoluminescence and Electroluminescent Devices. C. Delerue, G. Allen, and M. Lannoo, Theory
of the Radiative and Non Radiative Processes in Silicon Nanocrystallites. L. Brus, Silicon Polymers and Nanocrystals.
| Bibliographic details |
Hardbound, 351 pages, publication date: SEP-1997
ISBN-13: 978-0-12-752157-2
ISBN-10: 0-12-752157-7
Imprint: ACADEMIC PRESS
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| Price and Ordering |
Price:
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GBP 129.99
EUR 153.95
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Last update: 3 Oct 2009
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