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| MATERIALS FUNDAMENTALS OF MOLECULAR BEAM EPITAXY
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By
Jeffrey Tsao, Sandia National Laboratories
Description
The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement
of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown
by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics.
As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.
Contents
Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film
Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition.
Index.
| Bibliographic details |
Paperback, 301 pages, publication date: OCT-1992
ISBN-13: 978-0-12-701625-2
ISBN-10: 0-12-701625-2
Imprint: ACADEMIC PRESS
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060/653
Last update: 4 Sep 2009
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