By
Eli Kapon, Swiss Federal Institute of Technology, Lausanne, Switzerland
Description
This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins
by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode
lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers,
and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing
the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum
dot lasers.
The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts
of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers
engaged in research in this field. This book may also serve as an introduction for the companion volume,
Semiconductor Lasers
II: Materials and Structures, which presents further details on the different material systems and laser structures used for
achieving specific diode laser performance features.
Included in series
Optics and Photonics
Audience:
Researchers in the field of lasers, optoelectronics, and the technology of optical communication systems. Seniors and graduate students in physics and electrical engineering.
