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| HIGH SPEED HETEROSTRUCTURE DEVICES, 41
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To order this title, and for more information, click here
Albert Beer, Consulting Physicist
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
Eicke Weber, University of California, Berkeley, U.S.A.
Richard Kiehl, IBM T.J. Watson Research Center
T. Gerhard Sollner, Lincoln Laboratories
Included in series
Semiconductors and Semimetals,
Description
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed
at the graduate student or working researcher who needs a broad overview andan introduction to current literature.
Audience
Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.
Contents
F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon,
D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra,
Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based
and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References.
Index.
| Bibliographic details |
Hardbound, 454 pages, publication date: JUN-1994
ISBN-13: 978-0-12-752141-1
ISBN-10: 0-12-752141-0
Imprint: ACADEMIC PRESS
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| Price and Ordering |
Price:
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GBP 129.99
EUR 153.95
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Last update: 3 Oct 2009
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