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| SIC MATERIALS AND DEVICES, 52
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To order this title, and for more information, click here
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
Eicke Weber, University of California, Berkeley, U.S.A.
Included in series
Semiconductors and Semimetals,
Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Audience
Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Contents
K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC
Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur,
SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov,
and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based
Heterostructures and Devices. Subject Index.
| Bibliographic details |
Hardbound, 420 pages, publication date: MAY-1998
ISBN-13: 978-0-12-752160-2
ISBN-10: 0-12-752160-7
Imprint: ACADEMIC PRESS
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| Price and Ordering |
Price:
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GBP 129.99
EUR 153.95
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