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| ADVANCED MATERIALS FOR INTERCONNECTIONS, 66
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Proceedings of Symposium J on Advanced Materials for Interconnections of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996
By
Th. Gessner, Zentrum für Mikrotechnologien, TU Chemnitz, Germany
Included in series
European Materials Research Society Symposia Proceedings, 66
Description
The conference "Advanced Materials for Interconnections" took place in Strasbourg on 4-7 June 1996 hosted by the EMRS Society. Based on
the recent trends in microelectronics the main topics of the conference were new materials for interconnects like special aluminum alloys,
tungsten and copper as well as low k dielectric materials.
64 Papers were presented at the conference and 51 of these are contained
as full length papers within this volume of Microelectronic Engineering.
The proceedings are divided into 5 chapters. Chapter 1 related
to Metallization discusses cluster equipment for IC manufacturing, copper advanced technology, gap filling, mechanical reliability, deposition
technology, electroless and electro-plating, copper metallization copper interconnects and patterning of aluminum. Chapter 2, Process
Integration, discusses multilevel interconnect, study on thin-film SOI devices, wet cleanings, influence of material characteristics
and deposition processes, copper contamination and metallization, plasma behaviour, CMP processes, sub-micron inverse metallisation,
interconnect formation and mechanical polishing investigations. Chapter 3 covers Barriers, and chapter 4 studies, evaluates and monitors
Dielectrics. The final chapter looks at modelling comparisons.
Contents
• Metallization
• Process Integration
• Barriers
• Dielectrics
• Modelling
| Bibliographic details |
Hardbound, 0 pages, publication date: DEC-1997
ISBN-13: 978-0-444-20507-0
ISBN-10: 0-444-20507-1
Imprint: ELSEVIER
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