By
Sahra Sedigh
Description
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be
found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However,
silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature
of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused
by radiation.
The problem of instabilities is addressed in this volume, the third of this book series.
Vol.3 updates and supplements
the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device
interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics
to the presence of physical defects and impurities or to the radiation environment which caused them.
