NEW INSULATORS DEVICES AND RADIATION EFFECTS, VOLUME 3
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Description Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be
found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However,
silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature
of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused
by radiation.
The problem of instabilities is addressed in this volume, the third of this book series.
Vol.3 updates and supplements
the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device
interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics
to the presence of physical defects and impurities or to the radiation environment which caused them.
Contents
Part I - Additions and Updates to Volumes 1 & 2. Silica, silicon nitride and oxynitride thin films - an overview
of fabrication techniques, properties and applications (B. Balland, A. Glachant). A review of buried oxide structures and soi technologies
(J.L. Leray). Dielectric breakdown in silica - a survey of test methods (D.R. Wolters, J.F. Verwey, T.A. Zegers-Van Duijnhoven). Hot
carrier injections in silica and related instabilities in submicrometer mosfets (D. Vuillaume). Multilayer dielectrics for memory applications
((P. Gentil). Charge pumping techniques - their use for diagnosis and interface state studies in MOS transistors ((J.L. Autran, B. Balland,
G. Barbottin). The study of thermal nitridation and reoxidation mechanisms using isotopic tracing methods (J.J. Ganem, I.J. Baumvol).
Part II - Silicon Devices in Radiation Environments. The space radiation environment (D. Bräunig). An overview
of radiation-matter interactions (W.R. Fahrner). Radiation effects in electronic components (D. Bräunig, F. Wulf). Defects and radiation
- induced charge trapping phenomena in silica (P. Pailet, J.L. Leray). The effects of cosmic ions on electronic components (O. Musseau).
Author index. Subject index.
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