Series Editor:
Maurice Francombe, Georgia State University, Atlanta, U.S.A.
John Vossen, RCA Laboratories, Princeton, New Jersey
Description
Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included
are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging,
III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures
and quantum-wells for infrared emissions.
Audience:
Researchers in thin films, materials science, condensed matter physics, AVS, microelectronics, and computer simulation in this field.
