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| HIGH PRESSURE SEMICONDUCTOR PHYSICS I, 54
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To order this title, and for more information, click here
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
William Paul, Harvard University
Eicke Weber, University of California, Berkeley, U.S.A.
Tadeusz Suski, UNIPRESS, Warczawa, Poland
Included in series
Semiconductors and Semimetals,
Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished
itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time
of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the
University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor
materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes.
Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures,
High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and
even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors
and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device
engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors.
Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The
Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes
54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior
under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and
the availability of commercial piston–cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be
useful to both researchers and practitioners in applied physics, materials science, and engineering.
Audience
Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Contents
W. Paul, High Pressure in Semiconductor Physics: A Historical Overview. N.E. Christensen, Electronic Structure Calculations
for Semiconductors under Pressure. R.J. Nelmes and M.I. McMahon, Structural Transitions in the III-V and II-VI and group-IV
Semiconductors Under Pressure. A.R. Goni and K. Syassen, Optical Properties of Semiconductors Under Pressure. P. Trautman,
M. Baj, and J.M. Baranowski, Defects: Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs. M.-f.
Li and P.Y. Yu, High Pressure Study of DX enters Using Capacitance Techniques. T. Suski, Spatial Correlations of Impurity
Charges in Doped Semiconductors. N. Kuroda, Pressure Effects on the Electronic Properties of Diluted Magnetic Semiconductors.
Chapter References. Subject Index.
| Bibliographic details |
Hardbound, 577 pages, publication date: AUG-1998
ISBN-13: 978-0-12-752162-6
ISBN-10: 0-12-752162-3
Imprint: ACADEMIC PRESS
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Last update: 3 Oct 2009
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