DIODE LASER MATERIALS & DEVICES - A WORLDWIDE MARKET & TECHNOLOGY OVERVIEW TO 2005
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Edited By R. Szweda
Description This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends
in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates,
epitaxial wafers (epiwafers) and devices.
The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers
on which most of these devices are made.
The geographical coverage of the report includes North America, Japan and Europe, which
together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years.
However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc),
China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries
are commented on in the text where relevant, but are not quantified in the market data.
Chapter 1 is an introduction to the
market study.
Chapter 2 contains an executive summary.
Chapter 3 overviews materials markets. The size, quality,
and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser
products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand,
and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the
fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their
application.
Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial
opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well
as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described.
The
application data are presented for the following industrial groups:
A full 5-year forecast and analysis
is provided by application and region.
Chapter 5 is a technology overview. In this chapter a background and overview of developments
in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling
technology for the production of the present and future generations of laser diodes and related devices.
This process is crystal
growth and involves the following sequence:
• Bulk growth of single crystals • Epitaxial growth of semiconductor single
crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging &
test
Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices.
Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research.
Chapter 8 is
a directory of suppliers.
Chapter 9 provides acronyms and exchange rates.
For a PDF version of the report please call
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Audience
Users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices.
Contents
CHAPTER 1 - INTRODUCTION
1.1 Report Structure 1.2 Products 1.3 Markets 1.4 Regions 1.5 Research Background
2.6 Market by Application
Sector 2.6.1 Telecommunications Markets For Diode Lasers 2.6.2 Consumer Markets For Diode Lasers 2.6.3 Computer Markets
For Diode Lasers 2.6.4 Industrial Markets For Diode Lasers 2.6.5 Military/Aerospace Markets For Diode Lasers 2.6.6
Automotive Markets For Diode Lasers 2.6.7 Other Markets For Diode Lasers
CHAPTER 3 - APPLICATIONS MARKET OVERVIEW
3.1 Forecast Summary
3.2 Introduction 3.2.1 Substrates 3.2.2 Epiwafers
3.3 The World Market for Substrates 2000-2005
3.3.1 Introduction 3.3.2 Size Trends for Diode Laser Substrates 2000-2005 3.3.3 Merchant and Captive Production 3.3.4
Impact of Device Demand on Substrate Consumption 3.3.5 Substrate Pricing Trends 3.3.6 Other Substrate Trends 3.3.6.1 Introduction
3.3.6.2 Substrate Growth & Materials 3.3.6.3 GaN and SiC vs. Sapphire 3.3.6.4 GaAs-on-Si Substrates
3.4 World Substrate
Supplier Situation
3.5 Merchant GaAs Epitaxial Wafer Markets 3.5.1 Introduction 3.5.2 The World Market for Epiwafers 2000-2005
3.5.3 Epiwafer Industry Overview 3.5.4 Merchant vs. Captive Epitaxy Markets 3.5.5 Epiwafer Markets by Epitaxial Growth Technique
3.5.5.1 MOVPE 3.5.5.2 MBE 3.5.5.3 MOVPE vs. MBE Market Analysis 3.5.6 Epitaxial Wafer Markets by Geographic Region 3.5.7
Epitaxial Wafer Markets by Application 3.5.8 Epiwafer Diameter Trends 3.5.9 MBE Epiwafers Suppliers 3.5.10 MOVPE Epiwafer
Suppliers
CHAPTER 4 - APPLICATION MARKET OVERVIEW
4.1 Introduction 4.2 Diode Lasers in the Total Laser Marketplace
4.3 Worldwide Market for Diode Lasers
4.4 The Worldwide Diode Laser Business 4.4.1 Laser Sub-types 4.4.2 Market Applications
4.6 Consumer Markets for Diode Lasers 4.6.1
Introduction to Visible Laser Diodes 4.6.2 Red Visible Laser 4.6.2.1 CD/DVD 4.6.2.2 Laser Pointers 4.6.3 Visible Diode
Lasers
4.7 Computer Markets for Diode Lasers 4.7.1 Introduction to Diode Lasers for the Computer Market 4.7.2 CD Diode Lasers
4.7.3 High Density Optical Data Storage 4.7.4 Laser Printers
4.8 Industrial Markets for Devices 4.8.1 Introduction to
Diode Lasers for the Industrial Market 4.8.2 Application of Violet Diode Lasers 4.8.3 High-Power Diode Lasers 4.8.4 Quantum
Cascade Lasers
4.9 Military/Aerospace Markets Devices 4.9.1 Diode Lasers in the Military/Aerospace Market 4.9.2 Electronic
Warfare 4.9.3 Laser-based Weapons
4.10 Automotive Markets for Devices 4.10.1 Applications for Diode lasers in Vehicles
5.4 Substrates 5.4.1 GaAs vs. Silicon
5.4.2 Wafering 5.4.3 Aspects of Cutting 5.4.4 Metamorphic Crystal Growth 5.4.5 GaAs on Silicon
5.5 Epitaxial Growth
5.5.1 Introduction 5.5.2 Custom vs. Standard Equipment 5.5.3 MOVPE 5.5.4 Epitaxial Precursor Materials 5.5.5 Commercial
MOVPE Reactors 5.5.5.1 Introduction 5.5.5.2 The AIXTRON Planetary Reactor System 5.5.5.3 The EMCORE TurboDisc and Enterprise
Systems 5.5.5.4 Thomas Swan Systems 5.5.5.5 Other Systems 5.5.6 Commercial MBE Reactors 5.5.6.1 Introduction 5.5.6.2
RIBER Systems 5.5.6.3 Thermo VG Semicon Systems 5.5.6.4 Apllied Epi Systems
CHAPTER 7 - GEOGRAPHICAL LIST OF UNIVERSITIES AND SELECTED INDUSTRIAL
LABS INVOLVED IN RESEARCH
7.1 Introduction 7.2 Australia 7.3 Belgium 7.4 Canada 7.5 China 7.6 Finland 7.7
France 7.8 Germany 7.9 Greece 7.10 India 7.11 Ireland 7.12 Italy 7.13 Japan 7.14 Korea 7.15 The Netherlands
7.16 Poland 7.17 Russia 7.18 Singapore 7.19 South Africa 7.20 Spain 7.21 Sweden 7.22 Switzerland 7.23
Taiwan 7.24 Tunisia 7.25 UK 7.26 USA
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