Trap Level Spectroscopy in Amorphous Semiconductors

By

  • Victor Mikla, Institute for Solid State Physics, University of Uzhgorod, Ukraine
  • Victor Mikla, Institute for Solid State Physics, University of Uzhgorod, Ukraine

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.
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Audience

Researchers and postgraduate students in materials science and solid state physics.

 

Book information

  • Published: June 2010
  • Imprint: ELSEVIER
  • ISBN: 978-0-12-384715-7


Table of Contents

  1. Introduction
  2. Thermally stimulated depolarization currents in amorphous chalcogenides
  3. Carrier transport processes in amorphous solids
  4. Time-of-flight experiments in amorphous chalcogenide semiconductors
  5. Xerographic spectroscopy of states in mobility gap
  6. Photoinduced effects on states in the mobility gap
  7. Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors