Superlattice to Nanoelectronics

By

  • Raphael Tsu, Department of Electrical & Computer Engineering, University of North Carolina, USA

Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons.
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Audience

Academics, researchers and industry professionals working in nanoelectronics, materials science and electrical engineering

 

Book information

  • Published: October 2010
  • Imprint: ELSEVIER
  • ISBN: 978-0-08-096813-1

Reviews

"Tsu follows the development of superlattices and quantum wells from their inception in 1969. He expects readers to have working knowledge in basic mathematics such as complex variables and partial differential equations; some skill in computer programming; and intermediate to advance courses in electromagnetics, quantum mechanics, and solid-state and semiconductor physics. Starting with superlattices, he progresses through resonant tunneling with artificial quantum well states; optical properties and Raman scattering in artificial quantum systems; dielectric function and doping of a superlattice; quantum step and activation energy; semiconductor atomic superlattices; silicon quantum dots; capacitance, dielectric constant, and doping quantum dots; porous silicon; some novel devices; the quantum impedance of a electrons; and why super and why nano."--Reference and Research Book News

"This book is an update of a volume by the same name first published in 2005. It does form one of the most definitive descriptions of the physics underlying these new materials. It is also more than that, because it gives readers a lot of fresh insight to the behaviour of electrons in crystalline solids. Much of this book is ideal for assisting lecturers and tutors in putting across some of the more difficult concepts to advanced students… Overall some of the new additions make fascinating reading because Tsu relates to the reader in a very personal style…."--Contemporary Physics




Table of Contents


Preface

Introduction

1 Superlattice

1.1 The Birth of the Man-Made Superlattice

1.2 A Model for the Creation of Man-Made Energy Bands

1.3 Transport Properties of a Superlattice

1.4 More Rigorous Derivation of the NDC

1.5 Response of a Time-Dependent Electric Field and Bloch Oscillation

1.6 NDC from the Hopping Model and Electric Field-Induced Localization

1.7 Experiments

1.8 Type-III Superlattice (Historically Type-II Superlattice)

1.9 Physical Realization and Characterization of a Superlattice

1.10 Summary

2 Resonant Tunneling via Man-Made Quantum Well States

2.1 The Birth of Resonant Tunneling

2.2 Some Fundamentals

2.3 Conductance from the TsuEsaki Formula

2.4 Tunneling Time from the Time-Dependent Schro¨dinger Equation

2.5 Damping in Resonant Tunneling

2.6 Very Short ℓ and w for an Amorphous QW

2.7 Self-Consistent Potential Correction of DBRT

2.8 Experimental Confirmation of Resonant Tunneling

2.9 Instability in RTD

2.10 Summary

3 Optical Properties and Raman Scattering in Man-Made Quantum Systems

3.1 Optical Absorption in a Superlattice

3.2 Photoconductivity in a Superlattice

3.3 Raman Scattering in a Superlattice and QW

3.4 Summary

4 Dielectric Function and Doping of a Superlattice

4.1 Dielectric Function of a Superlattice and a Quantum Well

4.2 Doping a Superlattice

4.3 Summary

5 Quantum Step and Activation Energy

5.1 Optical Properties of Quantum Steps

5.2 Determination of Activation Energy in Quantum Wells

5.3 Summary

6 Semiconductor Atomic Superlattice (SAS)

6.1 Silicon-Based Quantum Wells

6.2 Si-Interface Adsorbed Gas (IAG) Superlattice

6.3 Amorphous Silicon/Silicon Oxide Superlattice

6.4 SiliconOxygen (SiO) Superlattice

6.5 Estimate of the Band-Edge Alignment Using Atomic States

6.6 Estimate of the Band-Edge Alignment With HOMOLUMO

6.7 Estimation of Strain from a Ball-and-Stick Model

6.8 Electroluminescence and Photoluminescence

6.9 Transport through a SiO Superlattice

6.10 A SiO Superlattice and Other Si/Ge, Si/Co, Si/C Monolayer Superlattice

6.11 Summary

7 Si Quantum Dots

7.1 Energy States of Silicon Quantum Dots

7.2 Resonant Tunneling in Silicon Quantum Dots

7.3 Slow Oscillations and Hysteresis

7.4 Avalanche Multiplication from Resonant Tunneling

7.5 Influence of Light and Repeatability under Multiple Scans

7.6 Many Body Effects in Coupled Quantum Dots

7.7 Summary

8 Capacitance, Dielectric Constant, and Doping Quantum Dots

8.1 Capacitance of Silicon Quantum Dots

8.2 Dielectric Constant of a Silicon Quantum Dot

8.3 Doping a Silicon Quantum Dot

8.4 Capacitance: Spatial Symmetry of Discrete Charge Dielectric

8.5 Summary

9 Porous Silicon

9.1 Porous Silicon: Light-Emitting Silicon

9.2 PSi: Other Applications

9.3 Summary

10 Some Novel Devices

10.1 Field Emission with Quantum Well and Nanometer Thick Multilayer Structured Cathode

10.2 Saturation Intensity of PbS QDs

10.3 Multipole Electrode Heterojunction Hybrid Structures

10.4 Some Fundamental Issues: Mainly Difficulties

10.5 Comments on Quantum Computing

10.6 Recent Activities in Superlattice

10.7 Graphene Adventure

10.8 Summary

11 Quantum Impedance of Electrons

11.1 Landauer Conductance Formula

11.2 Electron Quantum Waveguide

11.3 Wave Impedance of Electrons

11.4 Summary

12 Why Super and Why Nano?

12.1 Finite Solid, Giant Molecule, and Composite

12.2 Generalization of Superlattices into Components

12.3 QDs as Individual Components

12.4 Size Requirements

12.5 Superlattice and the World of Nano

12.6 Some New Opportunities

12.7 A Word of Caution