Superlattice to Nanoelectronics book cover

Superlattice to Nanoelectronics

Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include* Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement via geometry and multipole electrodes. Issues of robustness, redundancy and I/O.Researchers, course students and research establishments should read this book, written by the leading expert in nanoelectronics and superlattices.

Audience
Academics, researchers and industry professionals working in nanoelectronics, materials science and electrical engineering

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Published: April 2005

Imprint: Elsevier

ISBN: 978-0-08-044377-5

Contents

  • Preface
    Introduction
    CHAPTER 1SUPERLATTICE
    1.1 The Birth of the Man-Made Superlattice 1.2 A Model for the Creation of Man-Made Energy Bands 1.3 Transport Properties of a Superlattice 61.4 More Rigorous Derivation of the NegativeDifferential Conductance 1.5 Response of a Time-Dependent Electric Field 1.6 NDC from the Hopping Model and Electric FieldInduced Localization 1.7 Experiments 1.8 Type II Superlattice 1.9 Physical Realization and Characterization of a Superlattice 1.10 Summary References
    CHAPTER 2RESONANT TUNNELING VIA MAN-MADE QUANTUM WELL STATES
    2.1 The Birth of Resonant Tunneling 2.2 Some Fundamentals 2.3 Conductance from the Tsu–Esaki Formula 2.4 Tunneling Time from the Time-Dependent Schro¨dinger Equation 2.5 Damping in Resonant Tunneling 2.6 Very Short ‘ and w for an Amorphous Quantum Well 2.7 Self-Consistent Potential Correction of DBRT 2.8 Experimental Confirmation of Resonant Tunneling 2.9 Instability in RTD 2.10 Summary References
    CHAPTER 3OPTICAL PROPERTIES AND RAMAN SCATTERING IN MAN-MADE QUANTUM SYSTEMS
    3.1 Optical Absorption in a Superlattice 3.2 Photoconductivity in a Superlattice 3.3 Raman Scattering in a Superlattice and Quantum Well 3.4 Summary References
    CHAPTER 4DIELECTRIC FUNCTION AND DOPING OF A SUPERLATTICE
    4.1 Dielectric Function of a Superlattice and a Quantum Well 4.2 Doping a Superlattice 4.3 Summary References
    CHAPTER 5QUANTUM STEP AND ACTIVATION ENERGY
    5.1 Optical Properties of Quantum Steps 5.2 Determination of Activation Energy in Quantum Wells 5.3 Summary References
    CHAPTER 6SEMICONDUCTOR ATOMIC SUPERLATTICE (SAS)
    6.1 Silicon-Based Quantum Wells 6.2 Si-Interface Adsorbed Gas (IAG) Superlattice 6.3 Amorphous Silicon/Silicon Oxide Superlattice 6.4 Silicon–Oxygen (Si–O) Superlattice 6.5 Estimate of the Band-Edge Alignment Using Atomic States 6.6 Estimate of the Band-Edge Alignment with HOMO–LUMO 6.7 Estimation of Strain from a Ball and Stick Model 6.8 Electroluminescence and Photoluminescence 6.9 Transport through a Si–O Superlattice 6.10 Comparison of a Si–O Superlattice and a Ge–Si Monolayer Superlattice 6.11 Summary References
    CHAPTER 7Si QUANTUM DOTS
    7.1 Energy States of Silicon Quantum Dots 7.2 Resonant Tunneling in Silicon Quantum Dots 7.3 Slow Oscillations and Hysteresis 7.4 Avalanche Multiplication from Resonant Tunneling 7.5 Influence of Light and Repeatability under Multiple Scans 7.6 Summary References
    CHAPTER 8CAPACITANCE, DIELECTRIC CONSTANT AND DOPINGQUANTUM DOTS
    8.1 Capacitance of Silicon Quantum Dots 8.2 Dielectric Constant of a Silicon Quantum Dot 8.3 Doping a Silicon Quantum Dot 8.4 Summary References
    CHAPTER 9POROUS SILICON
    9.1 Porous Silicon—Light Emitting Silicon9.2 Porous Silicon—Other Applications 9.3 Summary References
    CHAPTER 10SOME NOVEL DEVICES
    10.1 Cold Cathode 10.2 Saturation Intensity of PbS Quantum Dots 10.3 Multipole Electrode Heterojunction Hybrid Structures10.4 Some Fundamental Issues: Mainly Difficulties10.5 Comments on Quantum Computing 10.6 Summary References
    CHAPTER 11QUANTUM IMPEDANCE OF ELECTRONS
    11.1 Landauer Conductance Formula 11.2 Electron Quantum Waveguide (EQW) 11.3 Wave Impedance of Electrons 11.4 Summary References
    CHAPTER 12NANOELECTRONICS: WHERE ARE YOU?
    References

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