Silicon-Germanium Strained Layers and Heterostructures
Semi-conductor and semi-metals seriesBy
- M. Willander
- Suresh Jain
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors
Semiconductors and Semimetals
Hardbound, 322 Pages
Published: October 2003
Imprint: Academic Press
- Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.