Silicon-Germanium Strained Layers and Heterostructures
Semi-conductor and semi-metals seriesBy
- M. Willander, Göteborg University and Linköping University
- Suresh Jain, National Physical Laboratory, New Delhi, India
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors
Semiconductors and Semimetals
Hardbound, 322 Pages
Published: October 2003
Imprint: Academic Press
- Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.