Silicon-Germanium Strained Layers and Heterostructures

Semi-conductor and semi-metals series


  • M. Willander, Göteborg University and Linköping University
  • Suresh Jain, National Physical Laboratory, New Delhi, India

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
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Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors


Book information

  • Published: October 2003
  • ISBN: 978-0-12-752183-1

Table of Contents

Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.