Silicon Epitaxy, 72

  • J. Rossi
    • Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
      • Eicke Weber, University of California, Berkeley, U.S.A.
        • Danilo Crippa, LPE Epitaxial Technology, Italy
          • Daniel Rode, Washington University, St. Louis, Missouri, U.S.A.

          Audience

          Researchers, graduate students, and practitioners working in the semiconductor field both at universities and in industry.

 

Book information

  • Published: September 2001
  • Imprint: ACADEMIC PRESS
  • ISBN: 978-0-12-752181-7


Table of Contents

1: CVD Technologies for Silicon: A Quick Survey2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping3: Epitaxial Growth Facilities, Equipment, and Supplies4: Epitaxial Growth Techniques5: Epitaxial Growth Techniques: Molecular Beam Epitaxy6: Epitaxial Growth Modeling7: Epitaxial Layer Characterization and Metrology8: Epitaxy for Discretes and Power Devices9: Epitaxy on Patterned Wafers10: Si-Based Alloys: SiGe and SiGe:C11: Silicon Epitaxy: New Applications