Silicon Epitaxy, 72
- J. Rossi
- Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
- Eicke Weber, University of California, Berkeley, U.S.A.
- Danilo Crippa, LPE Epitaxial Technology, Italy
- Daniel Rode, Washington University, St. Louis, Missouri, U.S.A.
Audience
Researchers, graduate students, and practitioners working in the semiconductor field both at universities and in industry.
Included in series
Semiconductors and Semimetals
Semiconductors and Semimetals
,
Published: September 2001
Imprint: Academic Press
ISBN: 978-0-12-752181-7
Contents
- 1: CVD Technologies for Silicon: A Quick Survey2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping3: Epitaxial Growth Facilities, Equipment, and Supplies4: Epitaxial Growth Techniques5: Epitaxial Growth Techniques: Molecular Beam Epitaxy6: Epitaxial Growth Modeling7: Epitaxial Layer Characterization and Metrology8: Epitaxy for Discretes and Power Devices9: Epitaxy on Patterned Wafers10: Si-Based Alloys: SiGe and SiGe:C11: Silicon Epitaxy: New Applications
