SiC Materials and Devices
Series Editor:- Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
- Eicke Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Audience
Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Included in series
Semiconductors and Semimetals
Semiconductors and Semimetals
Hardbound, 420 Pages
Published: May 1998
Imprint: Academic Press
ISBN: 978-0-12-752160-2
Contents
- K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.
