SiC Materials and Devices

Series Editor:

  • Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
  • Eicke Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
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Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).


Book information

  • Published: May 1998
  • ISBN: 978-0-12-752160-2

Table of Contents

K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.