Nonradiative Recombination in Semiconductors
- V.N. Abakumov
- V.I. Perel
- I.N. Yassievich, A.F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, Leningrad, U.S.S.R.
In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.
The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.
- Published: July 1991
- Imprint: NORTH-HOLLAND
- ISBN: 978-0-444-88854-9