Materials Fundamentals of Molecular Beam Epitaxy


  • Jeffrey Tsao, Sandia National Laboratories

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.
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AUDIENCE: Students and researchers in materials science, electrical engineering, solid-state and device-oriented physics, surface science, and all those interested in epitaxial thin films. Workers in the electronic and semiconductor industries.


Book information

  • Published: October 1992
  • ISBN: 978-0-12-701625-2

Table of Contents

Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition. Index.