Identification of Defects in Semiconductors, 51B
- Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
- Eicke Weber, University of California, Berkeley, U.S.A.
- Michael Stavola, Lehigh University, Bethlehem, Pennsylvania
Audience
Researchers, graduate students and practitioners in materials science (electronic materials field), and electrical engineering (field of electronic devices).
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Published: October 1998
Imprint: Academic Press
ISBN: 978-0-12-752165-7
Contents
- List of Contributors. Preface. G. Davies, Optical Measurements of Point Defects. P.M. Mooney, Defect Identification Using Capacitance Spectroscopy. M. Stavola, Vibrational Spectroscopy of Light Element Impurities in Semiconductors. P. Schwander, W.D. Rau, C. Kisielowski, M. Gribelyuk, and A. Ourmazd, Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy. N.D. Jager and E.R. Weber, Scanning Tunneling Microscopy of Defects in Semiconductors. Subject Index. Contents of Volumes in This Series.
