Hot-Carrier Effects in MOS Devices
- Eiji Takeda, Hitachi Ltd.
- Cary Yang, Santa Clara University
- Akemi Miura-Hamada, Hitachi Ltd.
The primary audience for this book includes silicon process, device, and design engineers (especially those in R&D), and scientists, as well as graduate students and researchers in silicon device technology, solid state science, electrical and electronic engineering, materials science, engineering, physics, and chemistry.This book is also suitable as a supplementary text for a graduate or short course on advanced MOS devices, device reliability, hot-carrier effects in MOS devices, VLSI device physics, or advanced CMOS design. It is useful for students working on device reliability research.
- Published: November 1995
- Imprint: ACADEMIC PRESS
- ISBN: 978-0-12-682240-3