High Speed Heterostructure Devices

Edited by

  • Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
  • Richard Kiehl, IBM T.J. Watson Research Center
  • T. Gerhard Sollner, Lincoln Laboratories

Series Editor:

  • Albert Beer, Consulting Physicist
  • Eicke Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.
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Audience

Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.

 

Book information

  • Published: June 1994
  • Imprint: ACADEMIC PRESS
  • ISBN: 978-0-12-752141-1


Table of Contents

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.