High Speed Heterostructure Devices
- Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
- Richard Kiehl, IBM T.J. Watson Research Center
- T. Gerhard Sollner, Lincoln Laboratories
- Albert Beer, Consulting Physicist
- Eicke Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.View full description
Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.
- Published: June 1994
- Imprint: ACADEMIC PRESS
- ISBN: 978-0-12-752141-1
Table of ContentsF. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.