Control of Semiconductor Interfaces book cover

Control of Semiconductor Interfaces

This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization.

A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

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Published: May 1994

Imprint: Elsevier

ISBN: 978-0-444-81889-8

Contents

  • (Please contact the publisher for a complete list of contents.) Preface. Parts 1. Plenary (2 papers). 2. Metal/silicon (8 papers). 3. Semiconductor hetero-interface (8 papers). 4. Characterization (I) (4 papers). 5. Semiconducting new materials (6 papers). 6. Metal/compound semiconductor (7 papers). 7. SiO2/Si (6 papers). 8. Characterization (II) (4 papers). 9. Insulator/semiconductor (8 papers). 10. Characterization (III) (6 papers). 11. Interface in device (4 papers). 12. Control of interface formation: Si (7 papers). 13. Control of interface properties: Si (3 papers). 14. Contact metallization: Si (2 papers). 15. Characterization: Si (5 papers). 16. Control of interface formation: compound semiconductors (5 papers). 17. Control of interface properties: compound semiconductors (5 papers). 18. Contact metallization: compound semiconductors (8 papers). 19. Characterization: compound semiconductors (8 papers). Subject index.

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